SQJ912DEP-T1_GE3
- Description
- Dual Mosfet/N-Ch/40V/30A, Powerpak So-8L Rohs Compliant: Yes |Vishay SQJ912DEP-T1_GE3
- Continuous Drain Current (ID)
- 30A
- Drain to Source Resistance
- 7.3mΩ
- Datasheet
Quantity
15,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Dual configuration, Two MOSFET Elements per Package
- 40V Minimum Breakdown Voltage
- 30A Continuous Drain Current (ID)
- 7.3 Milliohm Drain-Source on-Resistance
- AEC-Q101 Automotive qualified, -55C to 175C
- RoHS compliant, Tape and reel, 3, 000 per Reel
The SQJ912DEP-T1_GE3 from Vishay is a dual N-channel power MOSFET carrying two elements in one package, rated to a 40V minimum breakdown voltage with 30A of continuous drain current and a 7.3 milliohm drain-source on-resistance. It is qualified to AEC-Q101 for automotive use, rated for -55C to 175C, and was introduced in January 2021. The SQJ912DEP-T1_GE3 is RoHS compliant and ships on tape and reel in quantities of 3, 000.
AEC-Q101 qualified dual N-channel MOSFETs are specified for automotive power electronics: DC-DC converter half-bridges, body control modules, pump and fan drives, battery disconnect and load switching, and 12V and 48V power distribution. Packaging two matched switches together shortens the interconnect between them, which reduces parasitic inductance in half-bridge layouts compared with two separate devices. The AEC-Q101 rating and the -55C to 175C range are the attributes that distinguish this part from commercial-grade equivalents. No package designator is recorded in this product's attributes, so confirm the footprint against the Vishay datasheet.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
15,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.