SQJ912DEP-T1_GE3
- Description
- Dual Mosfet/N-Ch/40V/30A, Powerpak So-8L Rohs Compliant: Yes |Vishay SQJ912DEP-T1_GE3
- Continuous Drain Current (ID)
- 30A
- Drain to Source Resistance
- 7.3mΩ
- Datasheet
Quantity
15,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Dual N-channel MOSFET (2 elements) in PowerPAK SO-8L, 4 terminals
- 40V minimum breakdown voltage
- 30A continuous drain current
- Low drain-to-source on-resistance of 7.3mΩ
- Wide operating temperature range of -55°C to 175°C
- AEC-Q101 qualified and RoHS compliant
The Vishay SQJ912DEP-T1_GE3 is a dual N-channel MOSFET supplied in a PowerPAK SO-8L package. Each device offers a 40V minimum breakdown voltage, 30A continuous drain current, and a low 7.3mΩ drain-to-source on-resistance. The SQJ912DEP-T1_GE3 is AEC-Q101 qualified and RoHS compliant for automotive-grade designs.
The Vishay SQJ912DEP-T1_GE3 is typically used for load switching, power management, and DC-DC conversion in automotive and industrial electronics. Its dual N-channel configuration, low on-resistance, and AEC-Q101 qualification suit space-constrained, high-reliability power circuits. Power-electronics and automotive engineers specify this MOSFET for efficient switching in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
15,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.