MCQ14P02-TP
- Description
- Power Field-Effect Transistor, 14A I(D), 20V, 0.0085ohm
- Continuous Drain Current (ID)
- 14A
- Drain to Source Resistance
- 8.5mΩ
Quantity
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- Continuous Drain Current: 14A
- Low Drain to Source Resistance: 8.5mΩ
- Minimum Breakdown Voltage: 20V
- RoHS Compliant
- REACH SVHC: Yes
The MCC Power Field-Effect Transistor is a high-performance MOSFET designed for efficient power management in various applications. With a continuous drain current rating of 14A and a low drain to source resistance of 8.5mΩ, this transistor ensures minimal power loss and enhanced thermal performance. Its robust design allows it to handle a minimum breakdown voltage of 20V, making it suitable for demanding environments. This component is ideal for use in power supplies, motor control, and other high-current applications.
The Power Field-Effect Transistor, 14A I(D), 20V, 0.0085ohm is commonly used in power management applications due to its high current handling capability and low drain-to-source resistance. It is ideal for use in power converters, amplifiers, and energy-efficient circuits. Engineers and designers in the electronics industry rely on this component for efficient switching and amplification in various devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.