BUK9K6R8-40E
- Description
- Power Field-Effect Transistor, 40A I(D), 40V, 0.0072ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 40A
- Drain to Source Resistance
- 7.2mΩ
- Input Capacitance
- 2250pF
- Datasheet
Quantity
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- Continuous Drain Current: 40A
- Drain to Source Voltage: 40V
- Low Drain to Source Resistance: 7.2mΩ
- Max Operating Temperature: 175°C
- Fast Switching Times: Rise Time 22ns Fall Time 20ns
The Nexperia Power Field-Effect Transistor NTP40N06 is a high-performance N-Channel Silicon Trench MOSFET designed for demanding power applications. With a continuous drain current rating of 40A and a drain to source voltage of 40V, this transistor ensures efficient power management and minimal energy loss. Its low drain to source resistance of 7.2mΩ enhances performance in various electronic circuits, making it an ideal choice for power supply and motor control applications.
The Power Field-Effect Transistor is commonly used in power management applications, providing efficient switching with low on-resistance. It is suitable for high current applications where space and thermal management are critical. Engineers in automotive and industrial sectors utilize this component for its reliability and robust performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.