IRF7404
- Description
- -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
- Gate to Source Voltage (Vgs)
- 12V
- Continuous Drain Current (ID)
- 6.7A
- Drain to Source Resistance
- 40mΩ
- Datasheet
Quantity
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- Surface Mount SOIC Package
- Continuous Drain Current: 6.7A
- Drain to Source Breakdown Voltage: -20V
- Low Drain to Source Resistance: 40mΩ
- Wide Operating Temperature Range: -55°C to 150°C
The International Rectifier -20V Single P-Channel HEXFET Power MOSFET is designed for high-efficiency power management applications. This MOSFET features a compact SO-8 package, making it ideal for surface mount technology. With a continuous drain current rating of 6.7A and a maximum operating temperature of 150°C, it ensures reliable performance in demanding environments. The device is optimized for low on-resistance and high-speed switching, making it suitable for a variety of power applications.
The -20V Single P-Channel HEXFET Power MOSFET is commonly used in power switching applications, particularly in low-voltage power management circuits. Its ability to handle continuous drain currents up to 6.7A makes it suitable for various consumer electronics and automotive applications. This device is primarily used by engineers and designers working on circuit designs that require reliable and efficient power control.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.