A2N7002H-HF

Description
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Continuous Drain Current (ID)
300mA
Drain to Source Resistance
2.5mΩ
Datasheet
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  • Continuous Drain Current: 300mA
  • Max Operating Temperature: 150°C
  • Drain to Source Resistance: 2.5mΩ
  • Power Dissipation: 350mW
  • RoHS Compliant

The Comchip Small Signal Field-Effect Transistor is a versatile N-Channel MOSFET designed for efficient switching and amplification in various electronic applications. With a continuous drain current rating of 300mA and a maximum operating voltage of 60V, this silicon metal-oxide semiconductor FET is ideal for low-power circuits. Its compact design and robust performance make it suitable for both consumer and industrial electronics, ensuring reliable operation even in demanding environments.

The Small Signal Field-Effect Transistor is commonly used in low-power switching and amplification applications due to its high efficiency and response speed. With a maximum drain current of 300 mA and a breakdown voltage of 60 V, it is suitable for various electronic circuits. Designers and engineers in the fields of consumer electronics, automotive, and telecommunications often utilize this component for reliable performance in compact spaces.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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