EMB20P03V
- Description
- P‐Channel Logic Level Enhancement Mode Field Effect Transistor
- Continuous Drain Current (ID)
- 18A
- Drain to Source Resistance
- 20mΩ
- Datasheet
Quantity
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- Continuous Drain Current: 18A
- Drain to Source Resistance: 20mΩ
- Min Operating Temperature: -55°C
- Min Breakdown Voltage: 30V
- Number of Terminals: 8
The EMC P-Channel Logic Level Enhancement Mode Field Effect Transistor is designed for high-efficiency switching applications, providing reliable performance in various electronic circuits. With a continuous drain current rating of 18A and a low drain to source resistance of 20mΩ, this MOSFET ensures minimal power loss and optimal thermal management. Its robust construction allows for operation in extreme conditions, with a minimum operating temperature of -55°C, making it suitable for demanding environments.
The P-Channel Logic Level Enhancement Mode Field Effect Transistor is commonly used in low-voltage applications and switching circuits. It provides high efficiency thanks to its low Drain to Source Resistance and can handle continuous Drain Currents up to 18A. This component is utilized by electronics designers and engineers in various industries, especially in power management and signal processing.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.