SI2302A-TP
- Description
- N-Channel 20 V 3 A 72 mOhm Enhancement Mode Field Effect Transistor - SOT-23
- Continuous Drain Current (ID)
- 3A
- Drain to Source Resistance
- 32mΩ
- Datasheet
Quantity
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- Continuous Drain Current: 3A
- Drain to Source Resistance: 32 mΩ
- Max Operating Temperature: 150°C
- Min Operating Temperature: -55°C
- Min Breakdown Voltage: 20V
- 3-Terminal SOT-23 Package
The MCC N-Channel 20 V 3 A 72 m Ohm Enhancement Mode Field Effect Transistor is designed for high-efficiency switching applications. This compact SOT-23 package offers excellent thermal performance and reliability, making it suitable for a variety of electronic circuits. With a maximum operating temperature of 150°C and a low drain to source resistance, this MOSFET ensures optimal performance in demanding environments.
The N-Channel 20 V 3 A 72 m Ohm Enhancement Mode Field Effect Transistor is used in various electronic circuits for switching and amplification applications. Its low drain to source resistance and high continuous drain current capability make it ideal for power management in consumer electronics, automotive, and industrial applications. Engineers and designers often utilize this MOSFET for efficient performance in compact designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.