24NM65G-TF1-T
- Description
- Power Field-Effect Transistor, 24A I(D), 650V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
- Continuous Drain Current (ID)
- 24A
- Drain to Source Resistance
- 160mΩ
- Datasheet
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- Continuous Drain Current: 24A
- Drain to Source Resistance: 160mΩ
- Max Operating Temperature: 150°C
- Max Power Dissipation: 32W
- 1-Element Design for Compact Applications
- 3-Terminal Configuration for Easy Integration
The Unisonic Power Field-Effect Transistor is a high-performance N-Channel MOSFET designed to handle demanding applications with a continuous drain current of 24A and a maximum breakdown voltage of 650V. This robust silicon metal-oxide semiconductor FET features a low drain to source resistance of 160mΩ, ensuring efficient power management and minimal energy loss. With a maximum operating temperature of 150°C and a power dissipation capability of 32W, this transistor is ideal for high-power applications requiring reliability and efficiency.
The Power Field-Effect Transistor is commonly used in high-power switching applications due to its ability to handle continuous drain currents of up to 24A and a breakdown voltage of 650V. It features low drain to source resistance of 160mΩ, making it effective for reducing power loss in circuits. This component is ideal for engineers and designers in power electronics looking to enhance the efficiency of their systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.