AOTL66810Q
- Description
- Power Field-Effect Transistor, 445A I(D), 80V, 0.00125ohm, 1-Element, N-Channel, Silicon, Split Gate TreN-Channel MOSFET FET
- Continuous Drain Current (ID)
- 445A
- Drain to Source Resistance
- 1.25mΩ
- Datasheet
Quantity
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- Continuous Drain Current: 445A
- Drain to Source Resistance: 1.25mΩ
- Max Operating Temperature: 175°C
- Max Power Dissipation: 500W
- Min Breakdown Voltage: 80V
- 8-Terminal Configuration
The Alpha & Omega Semiconductor Power Field-Effect Transistor is a high-performance N-Channel MOSFET designed for demanding applications requiring high efficiency and reliability. With a continuous drain current rating of 445A and a maximum operating temperature of 175°C, this transistor is ideal for power management and switching applications. Its low drain to source resistance of 1.25mΩ ensures minimal power loss, making it a perfect choice for high-power circuits.
The Power Field-Effect Transistor is used for high-efficiency power switching in various applications, including power supplies and motor drives. With its high current capacity and low on-resistance, it is ideal for demanding environments in industrial and automotive settings. Engineers and designers utilize this component for its robust performance, reliability, and ability to handle significant power loads effectively.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.