AOTL66810
- Description
- Power Field-Effect Transistor, 420A I(D), 80V, 0.00145ohm, 1-Element, N-Channel, Silicon, Split Gate TreN-Channel MOSFET FET
- Continuous Drain Current (ID)
- 420A
- Drain to Source Resistance
- 1.45mΩ
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Continuous Drain Current: 420A
- Drain to Source Resistance: 1.45mΩ
- Max Power Dissipation: 425W
- Min Breakdown Voltage: 80V
- Single Element Design for Enhanced Efficiency
- 8 Terminal Configuration for Versatile Applications
The Alpha & Omega Semiconductor Power Field-Effect Transistor is a high-performance N-Channel MOSFET designed for demanding applications requiring high current handling and low resistance. With a continuous drain current rating of 420A and a maximum operating temperature of 175°C, this transistor is ideal for power management and switching applications. Its split gate design enhances performance while ensuring reliability in various environments.
The Power Field-Effect Transistor (FET) is commonly used in high-power applications such as motor control, power management, and switching circuits. Its key capabilities include handling a continuous drain current of 420A and operating at high temperatures up to 175°C. Electronics manufacturers and engineers leverage this N-Channel MOSFET for its low on-resistance and high-efficiency performance in various industrial and automotive applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.