MZ-V9S2T0BW

Description
990 EVO Plus 2TB SSD
Series
990 EVO Plus
Interface
PCIe 4.0 x4 NVMe
Capacity
2TB
Form Factor
M.2 2280
Samsung MZ-V9S2T0BW product image

Quantity

60 Available
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  • 2TB capacity, 990 EVO Plus Series
  • PCIe 4.0 x4 NVMe interface, M.2 2280 Form Factor
  • 236-Layer TLC V-NAND Flash
  • Sequential Read 7250MB/s, Sequential Write 6300MB/S
  • Random Read 1000K IOPS, Random Write 1350K IOPS
  • 1200TBW endurance, 0°C to 70°C Operating Range

Samsung supplies the MZ-V9S2T0BW as a 2TB member of the 990 EVO Plus series, an M.2 2280 NVMe solid state drive using 236-layer TLC V-NAND behind a PCIe 4.0 x4 interface. Sequential performance is rated at 7250MB/s read and 6300MB/s write, and random performance at 1000K IOPS read and 1350K IOPS write. The MZ-V9S2T0BW carries a 1200TBW endurance rating, double that of the 1TB capacity in the same family. It operates from 0°C to 70°C.

Two terabytes is the capacity most gaming and content-creation systems settle on, because modern game installs and 4K video projects outgrow a 1TB drive quickly. It is also a common single-drive choice for workstations and compact builds with only one M.2 slot. The doubled endurance rating over the 1TB version matters for write-heavy use such as video scratch space and frequent large-game reinstalls. Retail and system-builder channels are the main buyers.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

60 Available
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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