K4Z80325BC-HC16

• 8 Gb GDDR6 SDRAM, 256M X 32 Organization
• 32-Bit Wide Interface per Package
• 16 Gbps per-Pin Data Rate
• 1.25 V to 1.35 V Supply Range
• 180-Ball FBGA package, Surface Mount
• Synchronous Operation

The Samsung K4Z80325BC-HC16 is an 8 Gb GDDR6 SDRAM device organized as 256M x 32, giving a 32-bit wide interface per package. It runs at 16 Gbps per pin and operates from a 1.25 V to 1.35 V supply, synchronously with the host memory controller. The device is supplied in a 180-ball FBGA package for surface mount. K4Z80325BC-HC16 uses GDDR6 memory technology.

GDDR6 is graphics DRAM: it trades the low latency and flexible topology of DDR system memory for very high per-pin data rates over short point-to-point traces soldered close to the processor, which is how a graphics or accelerator device reaches hundreds of gigabytes per second of bandwidth. At 16 Gbps per pin on a x32 device, several K4Z80325BC-HC16 packages are placed around a GPU or ASIC to assemble a wide memory bus. Typical applications are discrete graphics cards, AI inference and training accelerators, networking and packet-processing ASICs, automotive ADAS compute, game consoles, and high-throughput video and imaging processors. Buyers are typically board and ASIC designers, AIB manufacturers and system houses specifying memory at the component level.