LBSS139LT1G

Description
Field Effect Transistors 0.2A 50V 3Pin SOT-23 N-Channel(with ESD)
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
200mA
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  • Continuous Drain Current: 200mA
  • Gate to Source Voltage: 20V
  • Max Operating Temperature: 150°C
  • Min Operating Temperature: -55°C
  • RoHS Compliant

The Leshan Radio Co. Field Effect Transistors 0.2A 50V 3Pin SOT-23 N-Channel (with ESD) is a versatile and reliable MOSFET designed for efficient switching applications. With a compact SOT-23 package, this N-Channel MOSFET is ideal for surface mount technology, providing excellent performance in a wide range of electronic circuits. It operates effectively in demanding environments, making it suitable for various industrial and consumer applications.

The Field Effect Transistors 0.2A 50V 3Pin SOT-23 N-Channel (with ESD) is commonly used in low-power switching applications and signal amplification. With a continuous drain current of 200mA and a wide temperature range, it is suitable for various electronic devices including consumer electronics and automotive systems. Engineers and designers in the semiconductor industry utilize this component for its reliable performance in compact surface mount configurations.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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