BUK9K6R8-40E
- Description
- Power Field-Effect Transistor, 40A I(D), 40V, 0.0072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 40A
- Drain to Source Resistance
- 7.2mΩ
- Input Capacitance
- 2250pF
- Datasheet
Quantity
43,500 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Continuous Drain Current: 40A
- Max Drain to Source Voltage: 40V
- Low Drain to Source Resistance: 7.2mΩ
- Fast Switching Times: 13ns Turn-On Delay and 27ns Turn-Off Delay
- Dual Element Configuration for Enhanced Performance
- RoHS Compliant for Environmental Safety
The NXP Semiconductors Power Field-Effect Transistor is a high-performance N-Channel MOSFET designed for demanding power applications. With a continuous drain current rating of 40A and a maximum drain to source voltage of 40V, this transistor ensures efficient operation in various electronic circuits. Its low drain to source resistance of 7.2mΩ contributes to minimal power loss, making it an ideal choice for power management solutions.
The Power Field-Effect Transistor is commonly used in various applications requiring efficient power management, such as motor control, switching regulators, and power supplies. With its low drain to source resistance and high continuous drain current capability, it is ideal for high-performance circuits. Engineers and designers in the fields of electronics and power systems frequently use this component for its reliability and effectiveness in enhancing circuit performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
43,500 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.