BCX56-16
- Description
- Bipolar (BJT) Single Transistor, NPN, 80 V, 180 MHz, 500 mW, 1 A, 100
- Collector Emitter Saturation Voltage
- 500mV
- Collector Emitter Voltage (VCEO)
- 80V
- Transition Frequency
- 180MHz
- Datasheet
Quantity
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- High Transition Frequency: 180 MHz
- Maximum Collector Current: 1 A
- Voltage Rating: 80 V
- Compact SOT-89 Package
- Surface Mount Configuration
The NXP Semiconductors NPN Bipolar (BJT) Single Transistor is designed for high-frequency applications, offering exceptional performance with a transition frequency of 180 MHz. This transistor is ideal for various electronic circuits requiring reliable switching and amplification. With a maximum collector current of 1 A and a voltage rating of 80 V, it is well-suited for demanding environments. Packaged in a compact SOT-89 case, this surface mount device ensures easy integration into your designs.
The Bipolar (BJT) Single Transistor is commonly used in amplification and switching applications across various electronic devices. It offers high frequency performance and power efficiency, making it suitable for consumer electronics, telecommunications, and industrial equipment. Engineers and designers favor this N-Channel transistor for its compact size and robust specifications in surface mount environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.