KHAA84901B-JC17T00

Description
HBM2E 16GB x 1024 3.5V 3.6GHz -40°C~85°C MPGA-1024
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  • High Bandwidth Memory Technology HBM2E
  • Memory Size of 16GB
  • Data Bus Width of 1024b
  • Operating Supply Voltage of 3.5V
  • Access Time of 32ms
  • Temperature Range from -40°C to 85°C

The Samsung HBM2E 16GB x 1024 is a cutting-edge high bandwidth memory solution designed for high-performance computing applications. With a remarkable data transfer rate of 3.6GHz, this DRAM component is optimized for speed and efficiency, making it ideal for data-intensive tasks. The MPGA-1024 package ensures a compact footprint while providing robust performance across a wide temperature range from -40°C to 85°C. This memory module is perfect for advanced graphics processing, AI applications, and high-speed data processing environments.

The HBM2E 16GB x 1024 is designed for high-performance computing applications that require fast memory access and large bandwidth. Its unique architecture makes it suitable for graphics processing units (GPUs), machine learning, and data-intensive tasks. Typically used by data centers and system developers, this memory module enhances the efficiency and speed of modern computing systems.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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