Description
Transistor MOSFET N-CH 20V 4.9A 3-Pin SOT-23 Plastic T/R
Drain to Source Resistance
27mΩ
Datasheet
Taiwan Semiconductor TSM2314CX RFG product image

Quantity

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  • Drain to Source Resistance: 27mO
  • Compact SOT-23 Package
  • Lifecycle Status: Production
  • RoHS Compliant
  • Manufacturer Lifecycle Status: Active

The Taiwan Semiconductor N-CH MOSFET is a high-efficiency electronic component designed for a variety of applications requiring reliable switching and amplification. With a maximum drain-source voltage of 20V and a current rating of 4.9A, this MOSFET is ideal for power management solutions in consumer electronics, automotive systems, and industrial applications. Packaged in a compact SOT-23 form factor, it offers excellent thermal performance and low on-resistance, making it a preferred choice for engineers seeking to optimize their designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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