KHAA84901B-JC17
- Description
- HBM2E 16GB x 1024 1.2V 3.6GHz 0°C~95°C MPGA-1024
Quantity
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- High Density 16Gb Memory Configuration
- Fast Access Time of 32ms
- Operating Supply Voltage of 1.2V
- Data Bus Width of 1024b for Enhanced Throughput
- Optimized for High Bandwidth Applications
The Samsung HBM2E 16GB x 1024 is a state-of-the-art DRAM memory module designed for high-performance computing applications. With a remarkable frequency of 3.6GHz and a synchronous operation, this memory module ensures rapid data processing and efficient performance. Its compact MPGA package and advanced memory technology make it an ideal choice for demanding environments, providing reliable operation within a temperature range of 0°C to 95°C.
The DRAM Chip HBM2E Flashbolt 16GB is used for high-performance computing applications that require fast data transfer rates, making it ideal for servers, graphics processing units (GPUs), and other memory-intensive tasks. With a frequency of 3.6GHz and synchronous access, this 16GB memory module is designed to enhance system performance and efficiency, operating seamlessly within a temperature range of 0°C to 95°C.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.