K4B4G1646E-BYMA
- Description
- DDR3-SDRAM 4GB DDR3 Sdram 933MHz (256MX1
- Memory Technology
- DDR3L
- Memory Type
- SDRAM
- Data Bus Width
- 16b
- Memory Size
- 4Gb
- Access Time
- 195ps
Quantity
30,240 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- DDR3L SDRAM Technology
- 4Gb Density Organized with a 16b Data Bus
- Clock Frequency Up to 1866M Hz
- 1.35V Operating Supply Voltage
- 96-Ball FBGA Surface-Mount Package
- 0°C to 95°C Operating Temperature Range
The Samsung K4B4G1646E-BYMA is a DDR3L SDRAM memory chip featuring 4Gb density and a 16b data bus width. It operates from a 1.35V supply and runs at clock frequencies up to 1866M Hz. The device is supplied in a 96-ball FBGA surface-mount package. It is rated for operation across a 0°C to 95°C temperature range.
DDR3L SDRAM is low-voltage volatile synchronous memory used as system or working memory in computing and embedded designs. It is typically deployed in consumer, networking, and general embedded systems. Typical users include embedded system designers and OEMs building single-board computers, network appliances, and industrial controllers.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
30,240 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.