SFH 3710-Z
- Description
- Silicon NPN Phototransistor with Vλ Characteristics, -40 to 85 °C, 1.3 x 2 x 0.8 mm
- Collector Emitter Saturation Voltage
- 100mV
- Collector Emitter Voltage (VCEO)
- 500mV
- Dark Current
- 3nA
- Max Collector Current
- 20mA
- Datasheet
Quantity
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- Compact 805 Case Package
- Wide Operating Temperature Range: -40°C to 85°C
- High Collector Emitter Breakdown Voltage: 5.5V
- Max Collector Current: 20mA
- Viewing Angle: 120°
- Low Dark Current: 3nA
The ams OSRAM Silicon NPN Phototransistor is designed for high-performance light detection applications, featuring exceptional Vλ characteristics and a compact form factor. With a top view orientation and a flat lens style, this phototransistor is ideal for surface mount technology. It operates efficiently across a wide temperature range from -40°C to 85°C, making it suitable for various environmental conditions. The device is packaged in a 805 case and is RoHS compliant, ensuring it meets modern environmental standards.
The Silicon NPN Phototransistor with Vλ Characteristics is utilized in light detection applications, providing high sensitivity at a wavelength of 570 nm. It is commonly used in optical switching, consumer electronics, and industrial devices due to its robust performance across a wide temperature range of -40 to 85 °C. Designed for surface mount technology, it suits both hobbyists and professional engineers seeking reliable components for photonic applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.