IRF540PBF
- Description
- Transistor: N-MOSFET; unipolar; 100V; 28A; 0.077ohm; 150W; -55+175 deg.C; THT; TO220
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 28A
- Drain to Source Resistance
- 77mO
- Input Capacitance
- 1.7nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Drain to Source Voltage: 100V
- Continuous Drain Current: 28A
- Low On-Resistance: 77mΩ
- High Power Dissipation: 150W
- Wide Operating Temperature Range: -55°C to 175°C
The Vishay N-MOSFET Transistor is a high-performance unipolar device designed for efficient power management in various applications. With a robust voltage rating of 100V and a continuous drain current of 28A, this transistor ensures reliable operation in demanding environments. Housed in a TO-220AB package, it features excellent thermal performance with a maximum power dissipation of 150W and operates effectively across a wide temperature range from -55°C to 175°C. This N-MOSFET is ideal for applications requiring high efficiency and low on-resistance.
The IRF540PBF is a N-MOSFET transistor widely used in power switching applications due to its high efficiency and reliability. With a maximum drain-source voltage of 100V and a continuous drain current of 28A, it is ideal for applications such as motor drivers, power supplies, and automotive circuits. Engineers and designers in industrial and consumer electronics sectors often utilize this component for its robust performance in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.