SI4554DY-T1-GE3
- Description
- Trans MOSFET N/p-ch 40V 6.8A/6.6A 8-PIN SOIC N T/R / MOSFET N/p-ch 40V 8A 8SO
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 8A
- Drain to Source Resistance
- 21mO
- Input Capacitance
- 690pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Complementary dual MOSFET (N-channel and P-channel), two elements in one package
- 40V drain-to-source voltage (Vdss) with 8A continuous drain current
- Low on-resistance of 21mO (Rds On max 24mO) and 1V threshold voltage
- 20V gate-to-source voltage and 690pF input capacitance
- Max power dissipation of 3.2W, rated -55°C to 150°C junction temperature
- 8-pin SOIC surface-mount package with tin plating, RoHS compliant
The Vishay SI4554DY-T1-GE3 is a complementary (N-channel and P-channel) dual MOSFET rated at 40V, supplied in an 8-pin SOIC (SO) surface-mount package. It provides 8A continuous drain current with low on-resistance and a 150°C maximum junction temperature. The SI4554DY-T1-GE3 is RoHS compliant and suited to compact power-switching designs.
The Vishay SI4554DY-T1-GE3 is commonly used for load switching, level shifting, and power management in compact circuits that benefit from having complementary N- and P-channel devices in a single package. Its dual configuration and small SOIC footprint suit DC-DC conversion, battery-powered devices, and general switching tasks. Hardware and power-electronics engineers typically specify this device for space-constrained board designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.