BLS9G2731LS-400

Description
S-Band Radar Power Transistor LDMOS 65V 4µA 2-Pin SOT502B Bulk
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  • High Voltage Rating: 65V
  • Low Gate Leakage Current: 4µA
  • Compact 2-Pin SOT502B Package
  • Optimized for S-Band Radar Applications

The Ampleon S-Band Radar Power Transistor LDMOS is a cutting-edge electronic component designed for high-performance radar applications. With a robust 65V rating and a low gate leakage current of just 4µA, this transistor ensures efficient power amplification and reliability in demanding environments. Packaged in a compact 2-Pin SOT502B format, it is ideal for integration into radar systems, providing exceptional performance and durability for both commercial and military applications.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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