STGWT60H65DFB
- Description
- Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube
- Max Power Dissipation
- 375W
- Collector Emitter Saturation Voltage
- 1.6V
- Collector Emitter Voltage (VCEO)
- 650V
- Datasheet
Quantity
3,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Single N-Channel IGBT, 650 V Collector-Emitter Rating
- 80 A Maximum Collector Current
- 1.6 V Collector-Emitter Saturation Voltage
- 375 W Maximum Power Dissipation
- 60 Ns Reverse Recovery Time
- Through-Hole mount, -55 C to +175 C, Lead-free, Tube Packaging
The STGWT60H65DFB is a single N-channel IGBT from STMicroelectronics rated at 650 V collector-emitter with an 80 A maximum collector current. Collector-emitter saturation voltage is 1.6 V and maximum power dissipation is 375 W, with a 175 C maximum operating temperature. It is a through-hole device in a 15.8 x 5 x 20.1 mm body weighing 6.76 g, supplied in tubes of 600. A 60 ns reverse recovery time is recorded for this part.
650 V IGBTs at 80 A are the standard switching element in motor drives and inverters, solar string inverters, induction heating, welding equipment, uninterruptible power supplies and EV charging hardware, where the device must block a rectified AC mains rail while carrying substantial current. IGBTs are chosen over MOSFETs at this voltage and current because conduction loss scales better with current in a bipolar output structure. The recorded reverse recovery time indicates a co-packaged freewheeling diode, which hard-switched inductive topologies require. Power electronics designers in industrial drives and renewable energy are the usual buyers.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
3,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.