STGP20H60DF
- Description
- Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
- Max Power Dissipation
- 167W
- Collector Emitter Saturation Voltage
- 2V
- Collector Emitter Voltage (VCEO)
- 600V
- Datasheet
Quantity
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- Collector Emitter Voltage: 600V
- Max Collector Current: 40A
- Max Power Dissipation: 167W
- Reverse Recovery Time: 90ns
- Lead Free and RoHS Compliant
- Operating Temperature Range: -55°C to 175°C
The STMicroelectronics Trans IGBT Chip N-CH 600V 40A 100000mW is a powerful and efficient Insulated Gate Bipolar Transistor designed for high-performance applications. With a robust TO-220 package, this IGBT is ideal for use in power electronics, offering exceptional reliability and thermal performance. It operates effectively in demanding environments, making it suitable for various industrial applications.
The Trans IGBT Chip N-CH 600V 40A is commonly used in high-power applications, such as motor drives, inverters, and power supplies. Its key capabilities include high voltage handling, efficient switching, and robust thermal management. Engineers and designers in power electronics rely on this IGBT for reliable performance in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.