US6M11TR
- Description
- US6M11 Series N/ P-Channel 20 V/12 V 1 W 600 mOhm Drive MosFet SMT - TUMT-6
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 12V
- Continuous Drain Current (ID)
- 1.3A
- Drain to Source Resistance
- 260mO
- Input Capacitance
- 110pF
- Datasheet
Quantity
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- Dual-channel (N-channel and P-channel) MOSFET
- 12V drain-to-source voltage (Vdss)
- 1.3A continuous drain current, 1W power dissipation
- 180mΩ maximum on-resistance (Rds(on))
- 6-pin TUMT-6 surface-mount package
- -55°C to 150°C operating temperature range
The ROHM US6M11TR is a dual-channel MOSFET combining an N-channel and a P-channel device in a 6-pin TUMT-6 surface-mount package. It is rated for a 12V drain-to-source voltage, 1.3A continuous drain current, and 1W power dissipation, with a maximum on-resistance of 180mΩ. The device is RoHS compliant and lead free.
The ROHM US6M11TR is used for load switching, level shifting, and small-signal power control in compact circuits. Its combined N-channel and P-channel devices in one package suit space-saving switching stages in portable and battery-powered designs. It is common in consumer electronics, mobile devices, and industrial control boards.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.