RUM002N02T2L

• 20V Drain-to-Source Breakdown voltage, 200mA Continuous Drain Current
• 1.2Ω Maximum on-resistance, 1V Gate Threshold Voltage
• 8V Maximum Gate-to-Source Voltage
• Fast Switching: 5ns Turn-on delay, 10ns Rise and Fall times, 25pF Input Capacitance
• 3-Pin SOT-23 package, 150mW Power Dissipation
• -55°C to 150°C Operating range, RoHS Compliant and Lead Free

The RUM002N02T2L is an N-channel MOSFET from ROHM in the RUM002N02 series, supplied in a 3-pin SOT-23 surface-mount package. It is rated for 20V drain-to-source with 200mA continuous drain current and a maximum on-resistance of 1.2Ω. A 1V gate threshold and 8V maximum Vgs make the RUM002N02T2L directly drivable from low-voltage logic. ROHM lists the part as production, and the catalogue records a REACH SVHC declaration of Yes.

The RUM002N02T2L is a small-signal switching MOSFET used where a logic output must control a modest load: LED indicators, small buzzers, logic-level translation, bias switching and enabling of downstream supply rails. Its 1V threshold and 20V rating suit 1.8V, 3.3V and 5V systems, and the 25pF input capacitance keeps gate drive current negligible for a microcontroller pin. The SOT-23 outline and 8000-piece reels reflect high-volume board assembly rather than power switching. Buyers are consumer, industrial and IoT hardware designers and the contract manufacturers stocking commodity small-signal MOSFETs.