FM25V10-GTR
- Description
- 128kB x 8 3.3V 40MHz -40°C~85°C SOIC-8
- Density
- 1Mb
- Memory Size
- 128kB
- Interface
- SPI, Serial
- Access Time
- 18ns
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- 1Mb density, 128kB X 8 Organisation
- SPI Serial Interface at Up to 40M Hz
- 18ns Access time, Asynchronous Operation
- Nonvolatile F-RAM Technology with No Erase Cycle Required
- 8-Pin SOIC Surface-Mount Package
- 2V to 3.6V supply, 3.3V nominal; 3mA Nominal Supply Current
- -40C to 85C Operating range, RoHS compliant, Tape and Reel
The FM25V10-GTR is a 1Mb serial F-RAM from Infineon organised as 128kB x 8 in an 8-pin SOIC package. F-RAM is ferroelectric nonvolatile memory, so writes complete at bus speed and require no erase cycle or write-wait, unlike EEPROM or flash. The device runs on an SPI serial bus at up to 40M Hz with an 18ns access time, operates from 2V to 3.6V at a nominal 3.3V, and is rated -40C to 85C. It is RoHS compliant, lead free, in current production, and shipped on tape and reel.
F-RAM is chosen over serial EEPROM wherever a design has to write nonvolatile data frequently, or has to complete a write as power is failing. Parts like the FM25V10-GTR therefore end up holding meter readings and tamper logs in smart utility meters, calibration and state data in industrial controllers and drives, event logs in medical and test instruments, and configuration in automotive and telecom line cards. The -40C to 85C range and small 8-pin SOIC footprint make it straightforward to drop into an existing SPI EEPROM socket position. Buyers are typically OEM firmware and hardware teams plus the CMs building those boards.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.