SI2307CDS-T1-GE3

• P-Channel polarity, -30V Drain-Source Voltage and Breakdown Voltage
• -2.7A Continuous Drain Current (ID)
• 88 Milliohm Maximum on-Resistance
• -3V Gate Threshold voltage, 20V Gate-Source Rating
• 340pF Input capacitance, 5.5ns Turn-on and 17ns Turn-Off Delay
• 3-Pin SOT-23 package, 1.1W dissipation, -55C to 150C

The SI2307CDS-T1-GE3 from Vishay is a single P-channel power MOSFET rated at -30V drain-source with -2.7A of continuous drain current and an 88 milliohm maximum on-resistance. It is supplied in a 3-pin SOT-23 surface-mount package with a 1.1W maximum power dissipation, a -3V gate threshold voltage and a 340pF input capacitance. The SI2307CDS-T1-GE3 is lead free and RoHS compliant and ships on tape and reel in quantities of 3, 000.

P-channel MOSFETs switch on when the gate is pulled below the source, which makes them the simplest way to build a high-side switch without a bootstrap or charge-pump gate driver. Parts of this class are used for load switching and power rail sequencing, reverse-battery and reverse-polarity protection, inrush current limiting and battery charge-path control in portable and embedded hardware. The product name quotes a 3.5A current and a 73 milliohm on-resistance is also recorded; the -2.7A continuous drain current and the explicit 88 milliohm maximum are published here. The attribute set additionally contains an 88 megaohm resistance value and a 1.44 gram weight, both of which are out of scale for a SOT-23 device and have been omitted.