2N7002,215
- Description
- Power MOSFET, N-Channel, 60 V, 300 mA, 5 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount
- Gate to Source Voltage (Vgs)
- 30V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 300mA
- Drain to Source Resistance
- 5Ω
- Input Capacitance
- 27.5pF
- Datasheet
Quantity
96,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Compact SOT-23 Package
- Drain to Source Voltage: 60 V
- Continuous Drain Current: 300 mA
- Low Drain to Source Resistance: 5 Ω
- Max Operating Temperature: 150°C
- RoHS Compliant
The Nexperia N-Channel Power MOSFET is designed for efficient switching applications, featuring a compact SOT-23 package that is ideal for surface mount technology. With a maximum drain to source voltage of 60 V and a continuous drain current of 300 mA, this MOSFET delivers reliable performance in various electronic circuits. Its low drain to source resistance of 5 Ω ensures minimal power loss, making it suitable for power management and control applications.
The Power MOSFET, N-Channel is commonly used in applications requiring efficient switching and amplification in electronic circuits. This component is ideal for compact designs due to its Surface Mount package and is widely utilized in consumer electronics, power management systems, and automotive applications. Engineers and designers leverage its low on-resistance and high voltage capabilities for reliable performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
96,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.