DMP2160UFDB-7
- Description
- Transistor MOSFET Array Dual P-CH 20V 3.8A 6-Pin uDFN2020 T/R
- Gate to Source Voltage (Vgs)
- 12V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 3.8A
- Drain to Source Resistance
- 70mO
- Input Capacitance
- 536pF
- Datasheet
Quantity
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- Dual P-Channel Configuration
- Maximum Drain to Source Voltage: 20V
- Continuous Drain Current: 3.8A
- Low Rds On Max: 70mΩ
- Compact 6-Pin DFN Package
- Wide Operating Temperature Range: -55°C to 150°C
The Diodes Inc. Transistor MOSFET Array Dual P-CH is a versatile and efficient solution designed for high-performance applications requiring reliable switching and amplification. This component features a compact 6-Pin DFN package, making it ideal for space-constrained designs. With a maximum drain to source voltage of 20V and a continuous drain current of 3.8A, it is well-suited for various electronic circuits. The device operates effectively across a wide temperature range, ensuring stability and performance in demanding environments.
The Transistor MOSFET Array Dual P-CH 20V 3.8A 6-Pin uDFN2020 T/R is commonly used in power management applications, enabling efficient switching and control of electrical signals. It is ideal for use in consumer electronics, automotive, and industrial applications where space-saving surface mount designs are required. Engineers favor this component for its low on-resistance and high thermal performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.