BSS138-7-F

Description
Transistor: N-MOSFET; unipolar; 50V; 0.2A; 3.5ohm; 0.2W; -55+150 deg.C; SMD; SOT23
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
50V
Continuous Drain Current (ID)
200mA
Drain to Source Resistance
1.4Ω
Input Capacitance
50pF
Datasheet
Diodes Inc. BSS138-7-F product image

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  • N-channel enhancement-mode MOSFET
  • 50V drain-to-source voltage
  • 200mA continuous drain current
  • 3.5Ω maximum Rds(on)
  • 1.2V threshold voltage (logic-level)
  • SOT-23 surface-mount package

The Diodes Incorporated BSS138-7-F is a single N-channel enhancement-mode MOSFET in a SOT-23 package. It is rated for 50V drain-to-source and 200mA continuous drain current, with a maximum on-resistance of 3.5Ω. Its 1.2V threshold voltage makes it logic-level compatible.

The BSS138 is widely used for level shifting (including I2C bus translation), small-signal switching, and low-side load control. Its logic-level threshold and small SOT-23 body make it a general-purpose staple for embedded and interface designers.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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