2N7002DW-7-F

• Dual N-Channel Enhancement-Mode MOSFET, Two Independent Channels
• 60 V Vdss with 70 V Drain-Source Breakdown
• 115 mA Continuous Drain Current per the Listed Rating
• 7.5 Ohm Maximum Rds(on); 2 V Gate Threshold
• 50 pF Input capacitance; 7 Ns Turn-on, 11 Ns Turn-Off Delay
• 200 mW Power dissipation, -55 C to +150 C; SOT-363, 2.2 X 1.35 X 1.0 mm, Lead-free, Tape and Reel

The 2N7002DW-7-F from Diodes Inc. packages two independent N-channel enhancement-mode MOSFETs in a 6-pin SOT-363 package. Each channel is rated 60 V drain-source with a 70 V breakdown, 115 mA continuous drain current and 7.5 Ohm maximum on-resistance. The 2 V threshold voltage allows drive from standard logic levels, and switching delays are 7 ns turn-on and 11 ns turn-off. Total package dissipation is 200 mW.

Dual small-signal MOSFETs in SOT-363 are used for low-side signal switching, bidirectional I2C and logic level translation, LED and indicator drive, MOSFET-based analog switching, and gate-drive buffering in compact designs. Packaging two channels in one 6-pin body halves the board area versus two SOT-23 parts, which is why it is common in handhelds, modules and dense sensor boards. The 115 mA rating confines it to signal and indicator loads rather than power switching. The listing records REACH SVHC as No.