SI8499DB-T2-E1
- Description
- Trans MOSFET P-CH 20V 7.8A 6-Pin Micro Foot T/R
- Gate to Source Voltage (Vgs)
- 12V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 7.8A
- Drain to Source Resistance
- 32mO
- Input Capacitance
- 1.3nF
- Datasheet
Quantity
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- Single P-channel MOSFET in a 6-pin Micro Foot package
- Drain-source voltage (Vdss) of 20V
- Continuous drain current of 7.8A
- Maximum on-resistance of 32mohm
- Low 500mV gate threshold voltage with fast switching times
- Operating temperature up to 150C, lead-free and RoHS compliant
The Vishay SI8499DB-T2-E1 is a single P-channel MOSFET in a 6-pin Micro Foot surface-mount package. It is rated for a drain-source voltage (Vdss) of 20V and a continuous drain current of 7.8A, with a maximum on-resistance of 32mohm and a low 500mV gate threshold voltage. The device is lead-free and RoHS compliant.
The Vishay SI8499DB-T2-E1 is used for high-side load switching and power management in compact, low-voltage designs. Low-threshold P-channel MOSFETs of this type are applied in load switches, battery protection, and power distribution in portable and consumer electronics. It is typically specified by hardware engineers needing efficient switching in a small package.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.