SI2302CDS-T1-GE3
- Description
- Single N-Channel 20 V 0.057 Ohms Surface Mount Power MOSFET - SOT-23
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 2.6A
- Drain to Source Resistance
- 45mΩ
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Surface Mount SOT-23 Package
- Drain to Source Voltage: 20 V
- Continuous Drain Current: 2.6 A
- Low Rds On Max: 57 mΩ
- Fast Switching Times: Rise Time 7 ns and Fall Time 7 ns
- Lead Free and RoHS Compliant
The Vishay Single N-Channel 20 V 0.057 Ohms Surface Mount Power MOSFET is designed for high-efficiency switching applications. This compact MOSFET is housed in a SOT-23 package, making it ideal for space-constrained designs. With a maximum drain to source voltage of 20 V and a continuous drain current of 2.6 A, it delivers reliable performance in various electronic circuits. Its low on-resistance and fast switching times ensure optimal power management and thermal performance.
The Single N-Channel 20 V 0.057 Ohms Surface Mount Power MOSFET - SOT-23 is commonly used in power management applications, including DC-DC converters and motor drivers. It is suitable for designers and engineers looking for high efficiency and low on-resistance in compact designs. This MOSFET supports various electronic devices requiring reliable switching capabilities in a surface mount package.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.