SI2374DS-T1-GE3

• N-Channel MOSFET, Single Channel
• 20 V Drain-Source Voltage (VDSS)
• 4.5 A Continuous Drain Current (ID)
• 25 Milliohm on-Resistance (RDS(on))
• 1 V Gate threshold, 8 V Gate-Source Rating -- Logic-Level Drive
• 3-Pin SOT-23 (TO-236) Surface-Mount Package
• 1.7 W Maximum Power dissipation, 150 C Maximum Junction Temperature
• -55 C to +150 C Operating range, Lead free, RoHS Compliant

The Vishay SI2374DS-T1-GE3 is an N-channel MOSFET from the Si2374DS series, rated at 20 V drain-source with 4.5 A of continuous drain current and 25 milliohms of on-resistance, in a 3-pin SOT-23 (TO-236) surface-mount package. Gate threshold voltage is 1 V and gate-source voltage is rated to 8 V, making it a logic-level device drivable directly from 1.8 V to 5 V control signals. Switching times are 4 ns turn-on delay with 22 ns rise and 9 ns fall, and maximum power dissipation is 1.7 W. The SI2374DS-T1-GE3 is lead free and RoHS compliant.

Low-voltage logic-level N-channel MOSFETs in SOT-23 are used as load switches and low-side drivers on 3.3 V, 5 V and single-cell battery rails: enabling and gating power to subsystems, driving LED strings and small motors, battery protection and load disconnect, and synchronous rectification in low-power converters. The combination of 25 milliohm on-resistance and direct logic-level drive means it can be switched by a microcontroller GPIO with minimal conduction loss. Common end markets are portable and battery-powered consumer electronics, IoT devices, computing peripherals and industrial sensor boards.