SVD2955T4G
- Description
- Power MOSFET -60V, -12A, 180 mOhm, Single P-Channel, DPAK. Power MOSFET
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 12A
- Drain to Source Resistance
- 180mΩ
- Input Capacitance
- 750pF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
499 AvailableNeed this part?
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Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
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- Single P-channel power MOSFET
- -60V drain-to-source voltage (Vdss)
- -12A continuous drain current
- 180m Ohm on-resistance (Rds(on))
- 20V Vgs, 4V threshold
- DPAK package, 55W, -55°C to 175°C
The onsemi SVD2955T4G is a single P-channel power MOSFET in a DPAK package. It is rated for -60V drain-to-source (Vdss), -12A continuous drain current, and 180m Ohm on-resistance, with a 20V gate-source rating and 55W power dissipation.
P-channel power MOSFETs like the SVD2955T4G simplify high-side switching, load switching, and reverse-battery protection in power-management circuits. The DPAK package supports board-level heat dissipation at moderate power. They are common in automotive, industrial, and computing power designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
499 AvailableNeed this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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