MRF101AN
- Description
- RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS
- Datasheet
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- Frequency Range: 1.8 to 250 MHz
- Output Power: 100 W CW
- Typical Gain: 23 dB at 50 MHz
- Drain to Source Voltage: 133 V
- Power Dissipation: 182 W
- Max Operating Temperature: 175°C
The NXP Semiconductors RF Power Transistor is designed for high-frequency applications ranging from 1.8 to 250 MHz, delivering a robust output power of 100 W CW. With a typical gain of 23 dB at 50 MHz, this LDMOS transistor is ideal for RF amplification in various communication systems. Packaged in a TO-220-3L form factor, it ensures efficient thermal management and reliable performance in demanding environments.
The RF Power Transistor is commonly used in RF amplification applications across a frequency range of 1.8 to 250 MHz, delivering a power output of up to 100 W CW. Its high gain and robust construction make it ideal for communication systems, broadcasting, and industrial applications. Engineers and developers in the RF and telecommunications sectors frequently utilize this component for its reliability and performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.