AFT20S015NR1
- Description
- Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
- Datasheet
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- Frequency Range: 1805 MHz to 2690 MHz
- Average Output Power: 1.5 W
- Wide Operating Temperature Range: -40°C to 150°C
- Surface Mount TO-270 Package
- Drain to Source Breakdown Voltage: 65 V
- Continuous Drain Current: 133 mA
The NXP Semiconductors Airfast RF Power LDMOS Transistor is designed for high-frequency applications ranging from 1805 MHz to 2690 MHz, delivering an average output power of 1.5 W at 28 V. This transistor is ideal for RF amplification in various communication systems, ensuring reliable performance in demanding environments. With its surface mount TO-270 package, it offers ease of integration into compact designs while maintaining excellent thermal stability across a wide temperature range from -40°C to 150°C.
The Airfast RF Power LDMOS Transistor is commonly used in RF amplification applications within the 1805-2690 MHz frequency range. It is capable of delivering a 1.5 W average output power, making it suitable for communications systems, industrial equipment, and broadcast transmission. Typically utilized by engineers and designers, it supports both surface mount and high-performance RF designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.