PMV50EPEAR

Description
Transistor MOSFET P-ch 30V 4.2A 3-PIN SOT-23 T/R
Drain to Source Resistance
35mΩ
Datasheet
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  • Low Drain to Source Resistance: 35 mΩ
  • Compact SOT-23 Package
  • 3-Pin Configuration for Easy Integration
  • RoHS Compliant for Environmental Safety

The Nexperia Transistor MOSFET P-Channel 30V 4.2A 3-PIN SOT-23 T/R is a high-performance MOSFET designed for efficient switching applications. With a compact SOT-23 package, this transistor is ideal for space-constrained designs while delivering reliable performance. It features a low drain to source resistance, making it suitable for various power management tasks in consumer electronics and industrial applications.

The Transistor MOSFET P-ch 30V 4.2A 3-PIN SOT-23 T/R is commonly used in low-voltage switching applications, such as power management and signal processing. It features a low drain to source resistance, making it suitable for efficient operation in compact designs. This component is widely utilized by engineers and designers in electronics for various consumer and industrial applications.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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