PMV16XNR
- Description
- PMV16XNR Series 20 V 20 mOhm 20.2 nC 1200 mW N-Channel TrenchMOS FET - SOT-23
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 6.8A
- Drain to Source Resistance
- 16mO
- Input Capacitance
- 1.24nF
- Datasheet
Quantity
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- Surface Mount Design for Easy Integration
- Maximum Drain to Source Voltage: 20 V
- Continuous Drain Current: 6.8 A
- Low On-Resistance: 20 mΩ
- Input Capacitance: 1.24 nF
- High Power Dissipation: 510 mW
The Nexperia PMV16XNR Series N-Channel TrenchMOS FET is designed for high-efficiency switching applications, offering exceptional performance in a compact SOT-23 package. With a maximum drain to source voltage of 20 V and a continuous drain current of 6.8 A, this MOSFET is ideal for power management and signal switching in various electronic devices. Its low on-resistance and input capacitance ensure minimal power loss and fast switching speeds, making it a reliable choice for modern electronic designs.
The PMV16XNR is an N-Channel TrenchMOS FET designed for efficient switching applications in various electronic devices. Commonly used in power management and signal amplification, it supports continuous drain currents of up to 6.8 A. This component is suitable for consumer electronics and industrial applications, providing reliable performance in compact surface mount packages.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.