PMZ290UNE2YL
- Description
- Single N-Channel 20 V 320 mOhm 1.4 nC 715 mW Silicon SMT MOSFET - SOT-883
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 1.2A
- Drain to Source Resistance
- 320mΩ
- Input Capacitance
- 46pF
- Datasheet
Quantity
96,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Surface Mount Design for Easy Integration
- Low On-Resistance: 320 mΩ
- Fast Switching Times: Rise Time 10 ns and Fall Time 4 ns
- Wide Drain to Source Voltage: 20 V
- High Continuous Drain Current: 1.2 A
The Nexperia Single N-Channel 20 V 320 mΩ 1.4 nC 715 mW Silicon SMT MOSFET - SOT-883 is designed for high-efficiency switching applications. This compact surface mount device features a low on-resistance and fast switching times, making it ideal for power management and signal switching in various electronic circuits. With a maximum operating temperature of 150°C, it ensures reliable performance in demanding environments.
The Single N-Channel 20 V 320 m Ohm 1.4 nC 715 mW Silicon SMT MOSFET - SOT-883 is used in a variety of electronic applications where efficient switching is required. It is suitable for power management, signal amplification, and high-speed switching circuits. Common users include engineers and designers in the fields of consumer electronics, automotive, and telecommunications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
96,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.