BSS84AK
- Description
- 50 V, 180 mA P-Channel TreN-Channel MOSFET
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- -50V
- Continuous Drain Current (ID)
- 180mA
- Drain to Source Resistance
- 8.5Ω
- Input Capacitance
- 24pF
- Datasheet
Quantity
102,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Surface Mount Design for Easy Integration
- Drain to Source Voltage: -50 V
- Continuous Drain Current: 180 mA
- Threshold Voltage: -1.6 V
- Fast Switching Times: Turn-On Delay Time 13 ns Turn-Off Delay Time 48 ns
- Compact SOT-23 Package Dimensions: 3 mm x 1.4 mm x 1 mm
The Nexperia 50 V, 180 mA P-Channel TreN-Channel MOSFET is designed for high-efficiency switching applications, providing reliable performance in a compact SOT-23 package. With a maximum operating temperature of 150°C, this MOSFET is suitable for a variety of electronic circuits requiring robust power management. Its low drain to source resistance and fast switching times make it an ideal choice for modern electronic designs.
The 50 V, 180 mA P-Channel TreN-Channel MOSFET is commonly used in power management applications, such as load switching and DC-DC converters. Its low threshold voltage and fast switching times make it suitable for portable devices and battery-operated equipment. Engineers and designers in the electronics industry leverage this MOSFET for its compact SOT-23 package and high reliability in various operating conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
102,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.