PMV250EPEAR
- Description
- P-Channel MOSFET, 1.5 A, 40 V, 3-Pin SOT-23 Nexperia PMV250EPEAR
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 1.5A
- Drain to Source Resistance
- 180mΩ
- Input Capacitance
- 450pF
- Datasheet
Quantity
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- Maximum Drain to Source Voltage: 40 V
- Continuous Drain Current: 1.5 A
- Low On-Resistance: 240 mΩ
- Fast Switching Times: Rise Time 6 ns and Fall Time 14 ns
- Wide Gate to Source Voltage: 20 V
- Lead Free and RoHS Compliant
The Nexperia PMV250EPEAR is a high-performance P-Channel MOSFET designed for efficient switching applications. With a compact 3-Pin SOT-23 package, this MOSFET delivers reliable performance in a variety of electronic circuits. It features a maximum drain to source voltage of 40 V and a continuous drain current of 1.5 A, making it suitable for demanding applications. The device is optimized for low on-resistance and fast switching times, ensuring minimal power loss and enhanced efficiency.
The P-Channel MOSFET is commonly used in low-side switching applications, such as power management and load control in consumer electronics. It is ideal for driving loads with a continuous drain current of up to 1.5 A and can handle drain-to-source voltages of 40 V. Engineers and designers in the electronics industry leverage this component for its efficiency and compact size in surface mount configurations.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.