BUK9K18-40E,115
- Description
- Transistor MOSFET Array Dual N -CH 40V 30A 8-Pin LFPAK-56D T/R
- Gate to Source Voltage (Vgs)
- 15V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 30A
- Drain to Source Resistance
- 9.5mΩ
- Input Capacitance
- 1.061nF
- Datasheet
Quantity
18,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Dual N-Channel Configuration
- Maximum Drain to Source Voltage: 40V
- Continuous Drain Current: 30A
- Low Rds On Max: 16mΩ
- Fast Switching Times: Rise Time 4.6ns Fall Time 9.9ns
- Lead Free and RoHS Compliant
The Nexperia Transistor MOSFET Array Dual N-CH 40V 30A 8-Pin LFPAK-56D T/R is a high-performance dual N-Channel MOSFET array designed for efficient power management in various applications. With a compact LFPAK package, this MOSFET array delivers exceptional performance with a maximum drain to source voltage of 40V and a continuous drain current of 30A. Its low on-resistance and fast switching times make it ideal for high-efficiency designs, ensuring reliable operation in demanding environments.
The Transistor MOSFET Array is commonly used in power management applications, including motor control, DC-DC converters, and load switching. With its dual N-Channel configuration and high current handling capability, it is suitable for efficient operation in compact electronic designs. This component is ideal for engineers and designers looking for reliable performance in high-temperature and high-power environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
18,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.