BSS138P,215
- Description
- BSS138P Series 60 V 1.6 Ohm 350 mW 0.72 nC N-Channel SMT TrenchMOS FET - SOT-23
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 360mA
- Drain to Source Resistance
- 900mΩ
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Drain to Source Voltage: 60 V
- Continuous Drain Current: 360 mA
- Gate to Source Voltage: 20 V
- Power Dissipation: 350 mW
- Turn-Off Delay Time: 9 ns
- Turn-On Delay Time: 2 ns
The Nexperia BSS138P Series N-Channel SMT TrenchMOS FET is designed for high-efficiency switching applications, offering a robust performance with a maximum drain to source voltage of 60 V. This compact device, housed in a SOT-23 package, is ideal for space-constrained designs while delivering reliable operation in various electronic circuits. With a low on-resistance and fast switching times, it is well-suited for both consumer and industrial applications.
The BSS138P Series N-Channel MOSFET is commonly used in low voltage applications such as signal switching and amplification in consumer electronics. With its low on-resistance and quick switching times, it is ideal for driving loads in portable devices. Engineers and designers utilize this component for its reliability in space-constrained environments, thanks to its compact SOT-23 packaging.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.