BSS138BK,215
- Description
- Power MOSFET, N-Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 360mA
- Drain to Source Resistance
- 1.6Ω
- Input Capacitance
- 56pF
- Datasheet
Quantity
18,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Surface Mount Design for Easy Integration
- Maximum Drain to Source Voltage: 60 V
- Continuous Drain Current: 360 mA
- Low On-Resistance: 1.6 Ω
- Wide Gate to Source Voltage: 20 V
- Fast Switching Times: Rise Time 5 ns Fall Time 20 ns
The Nexperia N-Channel Power MOSFET is designed for efficient switching applications, offering a maximum drain to source voltage of 60 V and a continuous drain current of 360 mA. Housed in a compact SOT-23 package, this MOSFET is ideal for surface mount technology, providing reliable performance in a variety of electronic circuits. With a low on-resistance of 1.6 Ω, it ensures minimal power loss and enhanced thermal management, making it suitable for demanding applications.
The Power MOSFET, N-Channel, is commonly used in applications requiring efficient switching and amplification in power electronics. Ideal for low to medium power circuits, it is employed in portable devices, automotive systems, and industrial controls. Electronics engineers and designers utilize this component for its compact size and reliable performance under various operating conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
18,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.