HGT1S10N120BNST
- Description
- HGT1S10N120BN Series 1200 V 35 A 298 W SMT Npt N-channel Igbt - TO-263AB
- Max Power Dissipation
- 298W
- Collector Emitter Saturation Voltage
- 4.2V
- Collector Emitter Voltage (VCEO)
- 1.2kV
- Continuous Collector Current
- 35A
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
20,800 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Collector Emitter Breakdown Voltage: 1.2kV
- Continuous Collector Current: 35A
- Collector Emitter Saturation Voltage: 4.2V
- Collector Emitter Voltage (VCEO): 1.2kV
- Current Rating: 35A
- 3-Pin D2PAK Package
The onsemi HGT1S10N120BNST is an IGBT (insulated-gate Bipolar Transistor). Key specifications include 1.2kV collector emitter breakdown voltage, 35A continuous collector current, 4.2V collector emitter saturation voltage, 1.2kV collector emitter voltage (vceo). It is supplied in a 3-pin D2PAK package. It operates across a -55°C to 150°C temperature range.
IGBTs are power switching transistors used in high-voltage, high-current control. It is integrated at the board level in a range of electronic systems. Typical users include hardware and system engineers designing this function into their products.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
20,800 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.