SBCP56-16T1G
- Description
- NPN Bipolar Transistor; 1 A; 80 V SOT-223
- Collector Emitter Saturation Voltage
- 500mV
- Collector Emitter Voltage (VCEO)
- 80V
- Transition Frequency
- 130MHz
- hFE Min
- 25
- Datasheet
Quantity
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- NPN Polarity for Versatile Applications
- Collector Emitter Breakdown Voltage: 80 V
- Max Collector Current: 1 A
- Transition Frequency: 130 MHz
- Power Dissipation: 1.5 W
- Lead Free and RoHS Compliant
The onsemi NPN Bipolar Transistor is a high-performance electronic component designed for various applications requiring efficient switching and amplification. With a maximum collector current of 1 A and a collector emitter breakdown voltage of 80 V, this transistor is ideal for use in power management and signal processing circuits. Packaged in a compact SOT-223 form factor, it ensures easy integration into your designs while maintaining high reliability and performance across a wide temperature range.
The NPN Bipolar Transistor; 1 A; 80 V SOT-223 is commonly used in switching and amplification applications, suitable for general-purpose circuit designs. It offers high frequency performance with a transition frequency of 130 MHz, making it ideal for audio and RF signal amplification. Engineers and designers in consumer electronics, telecommunications, and industrial automation sectors frequently utilize this component for its reliable operation and compact SOT-223 packaging.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.