BC807-25,215
- Description
- Single Bipolar Transistor, PNP, 45 V, 500 mA, 345 mW, SOT-23 (TO-236AB), 3 Pins, Surface Mount
- Collector Emitter Saturation Voltage
- 700mV
- Collector Emitter Voltage (VCEO)
- 45V
- Transition Frequency
- 80MHz
- hFE Min
- 160
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
15,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Polarity: PNP
- Collector Emitter Breakdown Voltage: -45 V
- Max Collector Current: 500 mA
- Power Dissipation: 250 mW
- Transition Frequency: 80 MHz
- Compact SOT-23 Package with 3 Pins
The Nexperia Single Bipolar Transistor PNP is a versatile and efficient component designed for a variety of electronic applications. With a maximum collector current of 500 mA and a collector emitter breakdown voltage of -45 V, this transistor is ideal for switching and amplification tasks. Packaged in a compact SOT-23 form factor, it ensures easy integration into space-constrained designs while maintaining high performance across a wide temperature range.
The Single Bipolar Transistor, PNP, is commonly used in amplification and switching applications due to its suitable collector current and breakdown voltage ratings. Designed for surface mount assembly, it is favored by engineers in compact electronic designs. This transistor is ideal for consumer electronics, automotive applications, and various communication devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
15,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.